TRB exam online practice test for Electronics and Communication Engineering dept provides you with ample practice material for TRB exam preparation for cse department which adheres to the real exam format. Each TRB - ECE exam practice test has 10 questions. After completing click on to the COMPLETE TEST to know the score and the correct answers.


Electronics and Communication Engineering - TRB Online Practice Test - 6

  • Online Practice Test - ECE
   

1.
  92. Given a discrete memoryless source of entropy H(x), a prefix code can be constructed with an average codeword length I which is bounded as follows :.
  • A.   H(x) ?I?H(x)+1
  •  
  • B.   H(x)
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  • C.   H(x) ?I?H(x)+1
  •  
  • D.   H(x) >I>H(x)+1
  Options: A    B    C    D   
   
 
   

2.
  If B is the bandwidth , the thermal noise power is proportional to :.
  • A.   B
  •  
  • B.   \sqrt{B}
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  • C.   \frac{1}{B^{2}}
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  • D.   B^{2}
  Options: A    B    C    D   
   
   

3.
  Pre-emphasis in FM system involves :.
  • A.   Compression of the modulating signal
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  • B.   Expansion of the modulating signal
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  • C.   Amplification of the lower frequency components of the modulating signal
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  • D.   Amplification of the higher frequency components of the modulating signal
  Options: A    B    C    D   
   
 
   

4.
  The entropy of a message source generating from messages with probabilities 0.5, 0.25, 0.125 and 0.125 is :.
  • A.   1 bit / message
  •  
  • B.   1.75 bits / message
  •  
  • C.   3.32 bits / message
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  • D.   5.93 bits / message
  Options: A    B    C    D   
   
   

5.
  Diffusion current in P-N junction is influenced by :.
  • A.   Applied potential
  •  
  • B.   Concentration gradient
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  • C.   Intrinsic concentration
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  • D.   Acceptor concentration
  Options: A    B    C    D   
   
 
   

6.
  A transistor connected in common base configuration has :.
  • A.   a high input resistance and a low output resistance
  •  
  • B.   a low input resistance and a high output resistance
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  • C.   a low input resistance and a low output resistance
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  • D.   a high input resistance and a high output resistance
  Options: A    B    C    D   
   
   

7.
  In JFET, the drain resistance r_{d}=4.2k\Omega and the tranconductance Im = 0.38 mA/V . The amplification factor is :.
  • A.   1.596
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  • B.   4
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  • C.   15.96
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  • D.   0.04
  Options: A    B    C    D   
   
 
   

8.
  .
  • A.  
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  • B.  
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  • C.  
  •  
  • D.  
  Options: A    B    C    D   
   
   

9.
  .
  • A.  
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  • B.  
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  • C.  
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  • D.  
  Options: A    B    C    D   
   
 
   

10.
  .
  • A.  
  •  
  • B.  
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  • C.  
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  • D.  
  Options: A    B    C    D   
   

Complete Test
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